capability: (scr, gto, igct, mct,. bjt, igbt, mosfet, diode). classification of state-of-the-art. 電力電子元件簡介 國立清華大學 https://www.ee.nthu.edu.tw › EE3840-(Devices) (9) Unidirectional current capability: (SCR, GTO, IGCT, MCT,. BJT, IGBT, MOSFET, diode). Classification of state-of-the-art. Power Semi- conductors. 28 頁 電力電子元件簡介 - Studylib studylib.net https://studylib.net › ... › Microelectronics ... (TRIAC) (9) Unidirectional current capability: (SCR, GTO, IGCT, MCT, BJT, IGBT, MOSFET, diode) Power Semiconductors Classification of state-of-the-art ... High-power active devices CERN https://cds.cern.ch › record › files 由 E Carroll 著作 · 2006 · 被引用 5 次 — Figure 1 shows the grouping of high-power semiconductors in which IGBTs and IGCTs are shown in bold to highlight the fact that these are igbt igct scr igbt High-power active devices https://www.researchgate.net/figure/Analysis-tree-of-power-semiconductor-technology-used-for-SSCBs_fig10_342292108 https://www.mdpi.com/1996...